General Purpose Mosfet

Good General Purpose Mosfets
Best General Purpose Mosfet
General Purpose Mosfet

General Purpose ≤40 V MOSFETs Infineon’s ≤40 V power MOSFETs are available in a variety of packages, offering design and application flexibility Infineon Technologies offers a wide range of single and dual N-channel power MOSFETs for 12 V DC or 24 V DC bus voltages, as well as products for smaller power handling (single and dual N- and P. China excellent provider of Mosfet Power Transistor and Tip Power Transistors, Shenzhen Hua Xuan Yang Electronics Co.,Ltd is Tip Power Transistors factory.

This entry was posted in Pinout and tagged MOSFET, Transistor. ICM7555 Datasheet – General Purpose Timer.
CPH6350 is P-Channel Power MOSFET, -30V, -6A, 43mΩ, Single CPH6 for General-Purpose Switching Device Applications.

Description

Good General Purpose Mosfets

All- TO-220 Style All- [GDS] Pinout	Polarity & Max Dissipating Power. W	Max. Voltage: Source-Drain & Gain-Source	Max.Drain Current & Max. Operating Temperature.	Rds(on) Max. ON-state D-S Resistance @10vG-S	. price
MTP12N10E	N-Ch 79w	100v /±20V	12A 175°C	0.16Ω	1.2$ or 5 for 4$
IRF520	N-Ch 60w	100v /±20v	10A 175°C	0.11-0.27Ω	1.2$ or 4 for 3$
IRF640	N-Ch 125w	200v /±20v	18A 150°C	0.18Ω	1.5$ or 5 for 6$
IRF740	N-ch 125w	400v /±20v	10A 150°C	0.55Ω	1.8$ or 4 for 5$
IRFZ44N (ESD2kv)	N-Ch 110W	55v /±10v	49A 150°C	0.022Ω	1.5$ or 5 for 6$
BUZ91 (hi-v)	N-Ch 150w	600v /±20v	8.5A 150°C	0.8Ω	2$ or 4 for 6$
IRF5210(compl.)	P-Ch 200w	-100v /±20V	40A 175°C	0.06Ω	2.2$ or 4 for 6$
IRF3710(compl.)	N-Ch 200w	100v /±20V	57A 175°C	0.023Ω	2$ or 4 for 6$
IRF9540	P-Ch 150w	-100v /±10V	19A 175°C	0.2Ω	2.5$ or 3 for 6$

Sanyo Electric Components Datasheet

P-Channel Silicon MOSFET General-Purpose Switching Device Applications

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2SJ635

General-Purpose Switching Device

Features

• Ultrahigh-speed switching.

• DC / DC Converter.

Absolute Maximum Ratings at Ta=25°C

Drain-to-Source Voltage

Drain Current (DC)

Allowable Power Dissipation

Storage Temperature

VDSS

Tstg

PW≤10µs, duty cycle≤1%

Electrical Characteristics at Ta=25°C

Symbol

Drain-to-Source Breakdown Voltage

Gate-to-Source Leakage Current

Forward Transfer Admittance

Input Capacitance

Reverse Transfer Capacitance

IDSS

VGS(off)

RDS(on)1

Ciss

Crss

VDS=--60V, VGS=0V

VDS=--10V, ID=--1mA

ID=--6A, VGS=--10V

VDS=--20V, f=1MHz

--60

--12

150

Unit

°C

--60

typ

Unit

--1 µA

--2.6 V

45 60 mΩ

2200

235 pF

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

SANYO Electric Co.,Ltd. Semiconductor Company

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Best General Purpose Mosfet

Sanyo Electric Components Datasheet

P-Channel Silicon MOSFET General-Purpose Switching Device Applications

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Parameter

Rise Time

Fall Time

Gate-to-Source Charge

Diode Forward Voltage

unit : mm

2SJ635

td(on)

td(off)

Qgd

Conditions

See specified Test Circuit.

VDS=--30V, VGS=--10V, ID=--12A

IS=--12A, VGS=0V

unit : mm

6.5 2.3

5.0

Ratings

Unit

80 ns

125 ns

10 nC

--0.9 --1.2 V

0.5

0.7

123

1.2

1 : Gate

3 : Source

SANYO : TP

VIN

--10V

D.C.≤1%

ID= --6A

D VOUT

2SJ635

0.85

0.6

0.5

1.2

2 : Drain

4 : Drain

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